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DISCRETE SEMICONDUCTORS
DATA SHEET
BFT46 N-channel silicon FET
Product specification File under Discrete Semiconductors, SC07 December 1997
Philips Semiconductors
Product specification
N-channel silicon FET
DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose amplifiers in thick and thin-film circuits. PINNING 1 = drain 2 = source 3 = gate Note : Drain and source are interchangeable. Marking code BFT46 = M3p Fig.1 Simplified outline and symbol, SOT23.
BFT46
handbook, halfpage
3 d s
g
1 Top view
2
MAM385
QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Total power dissipation up to Tamb = 40 C Drain current VDS = 10 V; VGS = 0 Transfer admittance (common source) ID = 0,2 mA; VDS = 10 V; f = 1 kHz Equivalent noise voltage VDS = 10 V; ID = 200 A; B = 0,6 to 100 Hz Vn < 0,5 V yfs > 0,5 mS IDSS > < 0,2 mA 1,5 mA VDS -VGSO Ptot max. max. max. 25 V 25 V 250 mW
December 1997
2
Philips Semiconductors
Product specification
N-channel silicon FET
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Drain-gate voltage (open source) Gate-source voltage (open drain) Drain current Gate current Total power dissipation up to Tamb = 40 Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient(1) Note 1. Mounted on a ceramic substrate of 8 mm x 10 mm x 0,7 mm. CHARACTERISTICS Tj = 25 C unless otherwise specified Gate cut-off current -VGS = 10 V; VDS = 0 Drain current VDS = 10 V; VGS = 0 Gate-source voltage ID = 50 A; VDS = 10 V Gate-source cut-off voltage ID = 0,5 nA; VDS = 10 V y-parameters at f = 1 kHz; VDS = 10 V; VGS = 0; Tamb = 25 C Transfer admittance Output admittance VDS = 10 V; ID = 200 A; Tamb = 25 C Transfer admittance Output admittance Input capacitance at f = 1 MHz; VDS = 10 V; VGS = 0; Tamb = 25 C Feedback capacitance at f = 1 MHz; VDS = 10 V; VGS = 0; Tamb = 25 C Equivalent noise voltage VDS = 10 V; ID = 200 A; Tamb = 25 C B = 0,6 to 100 Hz December 1997 3 Vn < Crs < Cis < yfs yos > < yfs yos > < -V(P)GS < -VGS > < IDSS > < -IGSS < Rth j-a = C(1) VDS VDGO -VGSO ID IG Ptot Tstg Tj max. max. max. max. max. max. max.
BFT46
25 V 25 V 25 V 10 mA 5 mA 250 mW 150 C
-65 to +150 C
430 K/W
0,2 nA 0,2 mA 1,5 mA 0,1 V 1,0 V 1,2 V
1,0 mS 10 S 0,5 mS 5 S 5 pF 1,5 pF
0,5 V
Philips Semiconductors
Product specification
N-channel silicon FET
BFT46
handbook, halfpage
300
MDA245
Ptot (mW) 200
100
0 0 40 80 120 200 160 Tamb (C)
Fig.2 Power derating curve.
handbook, full pagewidth
1.5 ID
MDA272
(mA) 1.25
1
0.75 VGS = 0 V max 0.5 - 0.1 V typ min 0 -1.25 - 0.2 V - 0.3 V - 0.4 V VGS (V) -1 -0.75 -0.5 -0.25 0 5 10 15 VDS (V) 20
0.25
Fig.3 Typical values. VDS = 10 V; Tj = 25 C.
December 1997
4
Philips Semiconductors
Product specification
N-channel silicon FET
BFT46
handbook, halfpage
1
MDA273
handbook, halfpage
ID (mA) 0.75
1.25 -V(P)GS
MDA274
- VGS = 0 V 0.1 V
(V) at ID = 0.5 nA 1
typ 0.5 0.2 V 0.3 V 0.25 0.5 0.75
0 0 50 100 Tj (C) 150
0.25 0 0.5 1 1.5 IDSS (mA) at VGS = 0
Fig.4 Typical values. VDS = 10 V.
Fig.5
Correlation between -V(P)GS and IDSS. VDS = 10 V; Tj = 25 C.
3 |yfs| (mS) 2 typ
MDA269
handbook, halfpage
5 |yos|
MDA270
(mS) 4
typ 3
2 1 1
0 0 0.25 0.5 ID (mA) 0.75
0 0 0.25 0.5 ID (mA) 0.75
Fig.6
yfs versus ID. VDS = 10 V; f = 1 kHz; Tamb = 25 C.
Fig.7
yos versus ID. VDS = 10 V; f = 1 kHz; Tamb = 25 C.
December 1997
5
Philips Semiconductors
Product specification
N-channel silicon FET
BFT46
103 handbook, halfpage |yos| (A/V) 102
MDA271
handbook, halfpage
6
MDA266
Cis (pF) 4
10
typ
2
1
0
10
20
VDS (V)
30
0 0
-1
-2
-3
VGS (V)
-4
Fig.8
yos versus VDS. ID = 0,4 mA; f = 1 kHz; Tamb = 25 C.
Fig.9 Typical values. VDS = 10 V; Tamb = 25 C.
handbook, halfpage
1.5
MDA267
handbook, halfpage
10
MDA268
Crs (pF)
IGSS (nA) 1
1 10-1 typ
0.5 10-2
0 0
-1
-2
-3
VGS (V)
-4
10-3
0
50
100
Tj (C)
150
Fig.10 Typical values. VDS = 10 V, Tamb = 25 C.
Fig.11 IGSS versus Tj. -VGSS = 10V; VDS = 0.
December 1997
6
Philips Semiconductors
Product specification
N-channel silicon FET
BFT46
104 handbook, full pagewidth en (nV/ Hz) 103
MDA264
102
typ 10
1 10
102
103
104
105
f (Hz)
106
Fig.12 VDS = 10 V; ID = 0,2 mA; Tamb = 25 C.
104 handbook, full pagewidth in (fA/ Hz) 103
MDA265
102
10
typ
1 10
102
103
104
105
f (Hz)
106
Fig.13 VDS = 10 V; ID = 0,2 mA; Tamb = 25 C.
December 1997
7
Philips Semiconductors
Product specification
N-channel silicon FET
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
BFT46
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
December 1997
8
Philips Semiconductors
Product specification
N-channel silicon FET
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values
BFT46
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
December 1997
9

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